DocumentCode
2204978
Title
Fabrication processes for high performance InAs-based HBTs
Author
Thomas, S., III ; Arthur, A. ; Elliot, K. ; Chow, D.H. ; Brewer, P. ; Rajavel, R. ; Shi, B. ; Deelman, P. ; Fields, C.H. ; Madhav, M.
Author_Institution
HRL Labs., Malibu, CA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
177
Lastpage
178
Abstract
InAs-based HBT technology was discussed. Several of the available fabrication processes were presented, as well as the device performance obtained from some of the options.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit technology; HBT integrated circuits; InAs; InAs based HBT fabrication; device performance; double-flip process; emitter resistance; metamorphic growth; semi-insulating substrate; transferred substrate approach; transmission line method measurements; Doping; Effective mass; Electron mobility; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Material properties; Photonic band gap; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239963
Filename
1239963
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