DocumentCode
2204995
Title
A comparison of dry plasma and wet chemical passivation of GaSb photodiodes
Author
Bhagwat, Vinay ; Langer, J.P. ; Bhat, LB ; Dutta, P.S. ; Refaat, Tamer ; Abedin, M. Nurul
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
179
Lastpage
180
Abstract
In this paper, the effect of ammonium sulfide passivation on the wet etched sample is reported. The device performance in terms of leakage current breakdown voltage, zero bias resistance area product and responsivity for the diodes is reviewed.
Keywords
III-V semiconductors; electric breakdown; electric resistance; etching; gallium compounds; leakage currents; passivation; photodiodes; GaSb; GaSb photodiodes; ammonium sulfide passivation; breakdown voltage; dry plasma passivation; leakage current; semiconductor diodes; wet chemical passivation; wet etching; zero bias resistance; Argon; Chemicals; Diodes; Leakage current; Passivation; Photodiodes; Plasma applications; Plasma chemistry; Plasma devices; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239964
Filename
1239964
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