• DocumentCode
    2205010
  • Title

    Oxides beyond SiO2: strategies to integrate oxides epitaxially with silicon

  • Author

    Schlom, Darrell G.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Penn State Univ, University Park, PA, USA
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    181
  • Lastpage
    182
  • Abstract
    A methodology is described, based on thermodynamics and oxidation kinetics, for the integration of oxides with silicon with the goal of achieving the desired oxide in close proximity with the underlying silicon substrate.
  • Keywords
    oxidation; silicon compounds; Si; SiO2; oxidation; proximity; silicon substrate; thermodynamics; Chemicals; Dielectric materials; High-K gate dielectrics; Kinetic theory; MOSFETs; Molecular beam epitaxial growth; Optical buffering; Oxidation; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239965
  • Filename
    1239965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205010