Title :
The research on breakdown voltage of high voltage SOI LDMOS devices with shielding trench
Author :
Liu, Qiyu ; Li, Zhaoji ; Zhang, Bo ; Fang, Jian
Author_Institution :
IME, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel structure of the high voltage SOI LDMOS with the shielding trench and its breakdown mechanism are proposed, which largely increases in the breakdown voltage of the high voltage SOI devices. The breakdown voltage more than 2000 V of the SOI LDMOS is obtained by the optimization
Keywords :
MOSFET; semiconductor device breakdown; silicon-on-insulator; 2000 V; breakdown mechanism; breakdown voltage; high voltage SOI LDMOS devices; high voltage SOI devices; optimization; shielding trench; Breakdown voltage; Dielectrics; Diodes; Immune system; Leakage current; Numerical analysis; Silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981446
