Title :
Failure of Ohm´s Law: Its Implications on the Design of Nanoelectronic Devices and Circuits
Author_Institution :
Div. of Eng. & Phys., Wilkes Univ., Wilkes-Barre, PA
Abstract :
Impact of Ohm´s law failure on the design of twenty-first-century nanocircuits is evaluated and discussed. The direct and differential resistance is shown to rise dramatically in the nonohmic regime, where applied voltage V Gt Vc, the critical voltage for the onset of nonohmic behavior. The velocity-field characteristics that affect transport in quantum nanostructures are reviewed. The impact on the familiar current and voltage division laws and CMOS design is indicated. The results presented are useful in characterizing and evaluating performance of nanodevices and related circuits
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit technology; nanoelectronics; CMOS design; Ohm law; nanoelectronic circuits; nanoelectronic devices; nonohmic behavior; quantum nanostructures; twenty-first-century nanocircuits; velocity-field characteristics; Acceleration; Charge carrier processes; Circuits; Conductivity; Electron mobility; Nanoscale devices; Nanostructures; Resistors; Virtual colonoscopy; Voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650890