High speed LIGBT with localized lifetime control by using high dose and low energy helium implantation

Author

Fang, Jian ; Li, Zhaoji ; Li, Hongyan ; Yang, Jian

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

1

fYear

2001

fDate

2001

Firstpage

166

Abstract

A high speed LIGBT with localized lifetime control by using high dose and low energy helium implantation (LC-IGBT) is proposed. Compared with AS-LIGBTs and the conventional LIGBTs, the partial irradiation results show that trade-off relationship between turn-off time and forward voltage drop has been improved. It is the advanced lifetime control method stable for huge thermal budget and applicable in any steps of device fabrication, so that it improves lifetime engineering possibilities in power integrated circuit with respected to conventional lifetime control methods

Keywords

carrier lifetime; helium; insulated gate bipolar transistors; ion implantation; power semiconductor devices; AS-LIGBTs; He; LC-IGBT; advanced lifetime control method; conventional LIGBTs; device fabrication; forward voltage drop; helium implantation; high speed LIGBT; lifetime engineering; localized lifetime control; partial irradiation; power integrated circuit; thermal budget; turn-off time; Anodes; Fabrication; Helium; Photonic band gap; Power engineering and energy; Power integrated circuits; Silicon; Switches; Thermal engineering; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981448

Filename

981448