Plasma-assisted syntheses of diamond films and nanotubes

Author

Chen, Weijie ; Xiao, Chengshan ; McColl, Derek ; Moewes, A. ; Hirose, Akira

Author_Institution

Plasma Phys. Lab., Saskatchewan Univ., Saskatoon, Sask., Canada

fYear

2002

fDate

26-30 May 2002

Firstpage

119

Abstract

Summary form only given, as follows. Experimental investigation of plasma-assisted syntheses of carbon based material, including diamond films and carbon nanotubes, has been carried out. The diamond films were deposited on silicon substrates using a hot filament device with an optional glow discharge capability. The optional glow discharge current was about 0.3 A. The substrate temperature was in the range 700-800/spl deg/C. The diamond films were grown at a pressure around 20 Torr in a vessel flushed with a mixture of hydrogen and methane gases.

Keywords

Raman spectra; X-ray absorption spectra; X-ray diffraction; X-ray emission spectra; carbon nanotubes; diamond; plasma CVD; plasma deposition; scanning electron microscopy; transmission electron microscopy; C; Raman spectra; SEM; TEM; X-ray absorption spectra; X-ray diffraction; X-ray emission spectra; arc discharge; carbon nanotubes; concentric multiwalls; diamond films; glow discharge capability; grain sizes; high quality polycrystalline films; hot filament device; plasma-assisted syntheses; sharp diamond peak; Carbon nanotubes; Diamond-like carbon; Glow discharges; Organic materials; Plasma devices; Plasma materials processing; Plasma temperature; Semiconductor films; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on

Conference_Location

Banff, Alberta, Canada

Print_ISBN

0-7803-7407-X

Type

conf

DOI

10.1109/PLASMA.2002.1030287

Filename

1030287