Title :
Modeling and analysis of 55 mm 4.5-kV MTO
Author :
Zhang, Bo ; Huang, Alex Q.
Author_Institution :
Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Based on the practical device structure, experimental data and numerical modeling results, impacts of the device parameters on the performance of a 55 mm, 4.5-kV MOS turn-off thyristor (MTO) are presented. The numerical analysis includes an external thermal resistance and realistic representation of the practical snubber switching circuit. Unity-gain turn-off capability of the MTO was demonstrated and the turn-off failure mechanism due to the non-uniform cell was clearly shown
Keywords :
MOS-controlled thyristors; semiconductor device models; snubbers; thermal resistance; 4.5 kV; 55 mm; MOS turn-off thyristor; MTO; device parameters; device performance; external thermal resistance; nonuniform cell; numerical analysis; snubber switching circuit; turn-off failure mechanism; unity-gain turn-off capability; Cathodes; Insulated gate bipolar transistors; MOSFET circuits; Medical simulation; Numerical simulation; Semiconductor process modeling; Snubbers; Switching circuits; Thermal resistance; Thyristors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981449
