Title :
Device Integration Issues Towards 10 nm MOSFETs
Author :
Ostling, Mikael ; Malm, B. Gunnar ; Von Haartman, Martin ; Hållstedt, Julius ; Zhang, Zhen ; Hellström, Per-Erik ; Zhang, Shili
Author_Institution :
Sch. of Inf. Technol., R. Inst. of Technol., Kista
Abstract :
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. Implementation of high kappa gate dielectrics is presented and device performance is demonstrated for TiN metal gate surface channel SiGe MOSFETs with a gate stack based on ALD-formed HfO2/Al2O3. Low frequency noise properties for those devices are also analyzed. A selective SiGe epitaxy process for low resistivity source/drain contacts has been developed and implemented in pMOSFETs. A spacer pattering technology using optical lithography to fabricate sub 50 nm high-frequency MOSFETs and nanowires is demonstrated. Finally ultra thin body SOI devices with high mobility SiGe channels are demonstrated
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; hafnium compounds; nanolithography; photolithography; semiconductor device manufacture; titanium compounds; 10 nm; HfO2-Al2O3; MOSFET; SiGe; TiN; device integration; device performance; epitaxial process; gate length; high kappa gate dielectrics; low frequency noise property; low resistivity source-drain contact; metal gate surface channel; nanowires; optical lithography; pMOSFET; spacer pattering technology; ultrathin body SOI devices; Conductivity; Dielectric devices; Dielectric materials; Epitaxial growth; Germanium silicon alloys; Hafnium oxide; Low-frequency noise; MOSFETs; Silicon germanium; Tin;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650891
