• DocumentCode
    2205131
  • Title

    Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs

  • Author

    Atanassova, E. ; Paskaleva, A.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. Sci., Sofia
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    45
  • Lastpage
    52
  • Abstract
    The present status, successes, challenges and future of Ta2 O5, and mixed Ta2O5-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta2O5-based dielectrics (doped Ta2O5 and multicomponent high-k dielectrics) as well as of metal/high-k interface in MIM capacitor configuration are identified as critical factors for further reduction of EOT value below 1 nm
  • Keywords
    DRAM chips; capacitors; dielectric materials; nanostructured materials; tantalum compounds; EOT value; MIM capacitor configuration; Ta2O5; high-k dielectric materials; metal-high-k interface; multicomponent high-k dielectrics; nanoscale DRAM; storage capacitors; Atomic layer deposition; Capacitance; FETs; High K dielectric materials; High-K gate dielectrics; History; Leakage current; MIM capacitors; Microelectronics; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2006 25th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    1-4244-0117-8
  • Type

    conf

  • DOI
    10.1109/ICMEL.2006.1650894
  • Filename
    1650894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205131