Title :
Nitrogen plasma immersion ion implantation of metals with a 2.45 GHz microwave source
Author :
Ueda, M. ; Stellati, C. ; Barroso, J.J. ; Nono, M.C.A. ; Alexander, A.
Author_Institution :
Inst. Nacional de Pesquisas Espaciais, Sao Paulo, Brazil
Abstract :
Results on Plasma Immersion Ion Implantation (Pill) of nitrogen ions into a metal surface using microwave plasma source are described. Preliminary results in our benchtop PIII system with microwave source showed successful N+ implantation in an Al sample but indicated the necessity of better plasma optimization and confirmed a need for a high repetition rate, negative high voltage pulser which is presently under development
Keywords :
ion implantation; ion sources; nitrogen; 2.45 GHz; 2.45 GHz microwave source; N; N+ plasma immersion ion implantation; high repetition rate; metal surface; negative high voltage pulser; plasma optimization; Nitrogen; Plasma accelerators; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma sheaths; Plasma sources; Pulse transformers; Voltage;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum, 1996. Proceedings. ISDEIV., XVIIth International Symposium on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-2906-6
DOI :
10.1109/DEIV.1996.545434
