DocumentCode
2205198
Title
Flash memory technology development
Author
Jun, Zhu
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
1
fYear
2001
fDate
2001
Firstpage
189
Abstract
As a new non-volatile semiconductor memory, FLASH was introduced by Masuoka in 1984. FLASH has non-volatility, in system rewritability, high density, low-cost and good reliability advantages. It is widely used on file storage, smart IC card, PLD, mobile phone, digital camera, DVD player and so on. This paper describes its programming, cell structure, FLASH array and reliability
Keywords
MOS memory circuits; semiconductor device reliability; FLASH; FLASH array; FLASH reliability; PLD; file storage; flash memory cell structure; flash memory programming; flash memory technology development; good reliability; high density; low-cost; nonvolatile semiconductor memory; smart IC card; system rewritability; EPROM; Electrons; Ferroelectric films; Flash memory; Microelectronics; Nonvolatile memory; Random access memory; Semiconductor memory; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981453
Filename
981453
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