• DocumentCode
    2205264
  • Title

    Backside-emitter-structure C-up GaAs HBTs for small power amplifiers

  • Author

    Mochizuki, K. ; Tanaka, K. ; Takubo, C. ; Matsumoto, H. ; Tanoue, T. ; Ohbu, I.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    In this paper, we have successfully fabricated ballast-free HBTs with L of 15 μm and Vce,.sat of 0.01 V by employing a backside-emitter-structure collector-up (C-up) configuration with ohmic collector contacts. Preliminary results on performance of these HBTs show their strong potential for application in small and highly efficient PA MMICs.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium arsenide; heterojunction bipolar transistors; ohmic contacts; power amplifiers; semiconductor devices; 0.01 V; 15 micron; GaAs; GaAs HBTs; backside emitter structure collector up configuration; highly efficient PA MMICs; ohmic collector contacts; power amplifiers; Electrodes; Electron devices; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Substrates; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239975
  • Filename
    1239975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205264