• DocumentCode
    2205287
  • Title

    Low turn-on voltage InP/In0.7Ga0.3As/InP double heterojunction bipolar transistors

  • Author

    Kim, Y.M. ; Lai, K. ; Rodwell, M.J.W. ; Gossard, A.C.

  • Author_Institution
    Dept. of Mater., California Univ., Santa Barbara, CA, USA
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    203
  • Lastpage
    204
  • Abstract
    In this paper, low Vbe HBTs were developed in the InP based material system, taking advantage of both its maturity and the high bandgap and breakdown field of an InP collector.
  • Keywords
    III-V semiconductors; energy gap; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor device breakdown; semiconductor devices; HBT; InP collector; InP-InGaAs-InP; InP/In0.7Ga0.3As/InP double heterojunction bipolar transistors; bandgap; breakdown field; Aerospace materials; Bipolar integrated circuits; DH-HEMTs; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium phosphide; Lattices; Leakage current; Low voltage; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239976
  • Filename
    1239976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205287