Author :
Harame, D.L. ; Freeman, G. ; Rieh, J. ; Jagannathan, B. ; Greenberg, D. ; Joseph, A. ; Johnson, J. ; Guarin, F. ; Yang, Z. ; Ahlgren, D. ; Cottrell, P. ; Dunn, J. ; Orner, B. ; Subbanna, S.
Abstract :
In this paper, we focus on the reliability of SiGe HBTs related to scaling. HBT performance will continues to increase with no forceable significant reliability roadblocks. Designers will need to pay attention to the configuration and use conditions of the transistor.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device reliability; semiconductor materials; HBT performance; SiGe; SiGe HBT; reliability roadblocks; transistor; Current density; Degradation; Electromigration; Germanium silicon alloys; Heating; Heterojunction bipolar transistors; Impact ionization; Rivers; Silicon germanium; Thermal resistance;
