DocumentCode
2205395
Title
Noise and linearity optimization in SiGe HBT RF technology
Author
Niu, Guofu
Author_Institution
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Volume
1
fYear
2001
fDate
2001
Firstpage
221
Abstract
This paper reviews the fundamental noise and linearity characteristics of SiGe HBTs, and discusses SiGe profile design for improved device and circuit performance. The interaction between device physics and circuit performance is illustrated using a novel low-noise amplifier design
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; SiGe; SiGe HBT RF technology; SiGe profile design; circuit performance; device performance; device physics; linearity optimization; low-noise amplifier design; noise; Circuit noise; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Linearity; Noise figure; Phase noise; Physics; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981460
Filename
981460
Link To Document