DocumentCode
2205420
Title
Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants
Author
Chandola, A. ; Ko, Youngok ; Dutta, P.S. ; Zakel, Andrew ; Gonzalez, Leonel ; Hall, Arlynn ; Henry, Jean ; Gillen, G.D. ; Guha, Shekhar
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
215
Lastpage
216
Abstract
In this paper, we analysed the bulk grown low bandgap III-V antimonides with reduced native defects. We have found out that isoelectronic dopants play an important role in determining residual carrier concentrations by compensating native defect thus affecting electrical-optical properties. The properties of InSb, GaSb and GaInSb crystals with various dopants are discussed.
Keywords
III-V semiconductors; absorption coefficients; carrier density; gallium compounds; indium compounds; semiconductor doping; GaInSb; GaInSb crystal; GaSb; GaSb crystal; InSb; InSb crystal; electrical properties; isoelectronic dopants; low bandgap III-V antimonides; native defects; optical properties; residual carrier concentrations; Absorption; Conducting materials; Crystals; Doping; Electron optics; Gallium arsenide; High speed optical techniques; III-V semiconductor materials; Optical materials; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239982
Filename
1239982
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