• DocumentCode
    2205497
  • Title

    DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In0.51Ga0.49P/In0.15Ga0.85As/GaAs power pHEMTs

  • Author

    Yo-Sheng Lin ; Shey-Shi Lu

  • Author_Institution
    Department of Electrical Engineering, National Chi-Nan University
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    223
  • Lastpage
    224
  • Keywords
    Gallium arsenide; Indium gallium arsenide; Intrusion detection; Linearity; Noise measurement; PHEMTs; Power generation; Radio frequency; Scattering parameters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239986
  • Filename
    1239986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2205497