DocumentCode
2205507
Title
Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET
Author
Takebe, M. ; Paul, N.C. ; Nakamura, K. ; Tametou, M. ; Iiyama, K. ; Takamiya, S.
Author_Institution
Graduate School of Natural Science and Technology, Kanazawa University
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
225
Lastpage
226
Keywords
Capacitance-voltage characteristics; Gallium arsenide; Hysteresis; Insulation; Leakage current; MOSFET circuits; Oxidation; Surface treatment; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239987
Filename
1239987
Link To Document