DocumentCode :
2205526
Title :
Design and realization of resonant tunneling permeable base transistors
Author :
Lindstrom, Peter ; Lind, Erik ; Wemersson, L.-E.
Author_Institution :
Solid State Physics, Lund University
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
227
Lastpage :
228
Keywords :
Capacitance; Current density; Doping; Gallium arsenide; Parameter estimation; Physics; Resonant tunneling devices; Semiconductor process modeling; Solid state circuits; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239988
Filename :
1239988
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2205526
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