Responsivity of Gated Photodiode in SOS Technology

Author

Fish, Alexander ; Yadid-Pecht, Orly ; Culurciello, Eugenio

Author_Institution

Univ. of Calgary, Calgary

fYear

2007

fDate

28-31 Oct. 2007

Firstpage

527

Lastpage

530

Abstract

We report on the responsivity of silicon-on-sapphire (SOS) gated photodiode. A test chip, consisting of 1024 photodetectors, connected in parallel, was fabricated in a Peregrine´s 0.5 mum SOS technology and successfully tested by direct photocurrent measurements. We include measurements from a test chip, showing photocurrent dependence on reverse applied voltage, incident illumination intensities and light wavelengths. Dark current measurements are also reported. The measurement results are compared with recently presented PIN photodiodes showing that the gated photodiode can be an appropriate candidate for further implementation in image sensor arrays.

Keywords

image sensors; p-i-n photodiodes; PIN photodiodes; Peregrine SOS technology; SOS technology; dark current measurements; direct photocurrent measurements; image sensor arrays; incident illumination intensities; photocurrent dependence; photodetectors; reverse applied voltage; silicon-on-sapphire gated photodiode; Dark current; Lighting; Photoconductivity; Photodetectors; Photodiodes; Semiconductor device measurement; Sensor arrays; Testing; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2007 IEEE

Conference_Location

Atlanta, GA

ISSN

1930-0395

Print_ISBN

978-1-4244-1261-7

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2007.4388452

Filename

4388452