Development of large diameter InP single crystal

Author

Sun, Niefeng ; Wu, Xiawan ; Wu, Xiang ; Zhao, Youwen ; Cao, Lixin ; Zhao, Quan ; Guo, Weilian ; Zhang, Ji ; Zhao, Zhengping ; Bi, Keyun ; Sun, Tongnian

Author_Institution

Hebei Semicond. Res. Inst., China

Volume

1

fYear

2001

fDate

2001

Firstpage

267

Abstract

A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis and liquid encapsulated Czochralski (LEC) growth process. The in-situ process exhibits several advantages over the two-step process of compounding and growing in separate furnaces. About 2500-5000g stoichiometric poly InP is synthesized reproducibly by P-injection method in the high-pressure puller. Twin-f ree InP single crystals with diameter of 60-100 mm can be pulled after the synthesis

Keywords

III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; 2500 to 5000 g; 2500-5000 g stoichiometric InP; 60 to 100 mm; InP; InP single crystal; P-injection; Win-Free InP single crystals; diameter 60-100 mm; liquid encapsulated Czochralski growth process; phosphorus in-situ injection synthesis; synthesized reproducibly; Containers; Contamination; Crystalline materials; Electromagnetic wave absorption; Furnaces; Impurities; Indium phosphide; Optoelectronic devices; Semiconductor materials; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981470

Filename

981470