Title :
New intrinsic gettering process in Czochralski-silicon wafer
Author :
Li, Y.X. ; Liu, C.C. ; Guo, H.Y. ; Wang, X. ; Pan, M.X. ; Xu, Y.S. ; Yang, D.R. ; Que, D.L.
Author_Institution :
Sch. of Mater. Sci. & Eng., Hebei Univ. of Technol., Tianjin, China
Abstract :
A new intrinsic gettering (IG) process was established in Czochralski-silicon (CZSi) wafer subjected to a one-step annealing sequence based on the interaction of interstitial oxygen with the defects induced by neutron irradiation. The defects in Czochralski silicon wafer can be controlled by neutron irradiation. When irradiation flux changes from 5×1017 to 1.5×1018 cm-2, combining with one-step high-temperature annealing procedure, the neutron irradiated wafers showed an excellent intrinsic gettering effect
Keywords :
VLSI; annealing; crystal defects; crystal growth from melt; elemental semiconductors; getters; neutron effects; semiconductor growth; silicon; Czochralski-silicon wafer; Si; intrinsic gettering; neutron irradiated wafers; neutron irradiation; one-step annealing sequence; one-step high-temperature annealing; Annealing; Gettering; Heat treatment; Materials science and technology; Neutrons; Petroleum; Silicon; Surface treatment; Temperature; Very large scale integration;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981472
