Growth of crystal silicon by PMCZ method

Author

Zhang, Weilian ; Tan, Baimei ; Li, Jiaxi ; Sun, Junsheng ; Zhang, Enhuai

Author_Institution

Hebei Univ. of Technol., Tianjin, China

Volume

1

fYear

2001

fDate

2001

Firstpage

280

Abstract

In this paper, we present our research on the growth of CZSi in a ring permanent magnetic field (PMCZ). It was shown that in the ring permanent magnetic field thermal convection in melt and centrifugal pumping flows due to crystal rotation can be strongly suppressed so that the fluctuations of temperature and micro-growth rate at interface are restrained effectively. The oxygen concentration in as-grown crystal is lower and the dopant is more homogeneous. The mechanism of the effect of the permanent magnetic field on the growth of CZSi is also discussed

Keywords

convection; crystal growth from melt; elemental semiconductors; oxygen; semiconductor technology; silicon; zero gravity experiments; O concentration; O impurity; Si:O; centrifugal pumping; diffusion kinetics; fluctuations of temperature; melt; micro-growth; ring permanent magnetic field; thermal convection; Electromagnetic fields; Gravity; Impurities; Magnetic devices; Magnetic fields; Oxygen; Silicon; Temperature; Thermal conductivity; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981473

Filename

981473