Title :
In doping on MBE grown HgCdTe
Author :
Yan, Wu ; Lu, Chen ; Shan-Li, Wang ; Mei-Fang, Yu ; Yi-Min, Qiao ; Li, He
Author_Institution :
Inst. of Tech. Phys., Acad. Sinica, Shanghai, China
Abstract :
The results of indium doping on MBE grown HgCdTe are described. It was found that the indium. electrical activation in HgCdTe was close to 100%, the donor activation energy was at least smaller than 0.6 meV. It was confirmed that for infrared FPAs applications, a donor concentration of ~3 × 1015cm-3 should be necessarily controlled. The diffusion behavior of indium. was studied by thermal annealing, and a diffusion coefficient of ~10-14cm2/sec at 400°C was obtained, which confirms the feasibility and validity of indium as an n-type dopant
Keywords :
II-VI semiconductors; annealing; cadmium compounds; diffusion; elemental semiconductors; focal planes; indium; infrared detectors; mercury compounds; molecular beam epitaxial growth; semiconductor doping; HgCdTe; HgCdTe:In; In doping; MBE; diffusion; diffusion coefficient; donor activation energy; donor concentration; infrared FPA; n-type dopant; thermal annealing; Annealing; Doping; Electric variables measurement; Impurities; Indium; Mercury (metals); Molecular beam epitaxial growth; Physics; Substrates; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981475
