In doping on MBE grown HgCdTe

Author

Yan, Wu ; Lu, Chen ; Shan-Li, Wang ; Mei-Fang, Yu ; Yi-Min, Qiao ; Li, He

Author_Institution

Inst. of Tech. Phys., Acad. Sinica, Shanghai, China

Volume

1

fYear

2001

fDate

2001

Firstpage

286

Abstract

The results of indium doping on MBE grown HgCdTe are described. It was found that the indium. electrical activation in HgCdTe was close to 100%, the donor activation energy was at least smaller than 0.6 meV. It was confirmed that for infrared FPAs applications, a donor concentration of ~3 × 10¹⁵cm^-3 should be necessarily controlled. The diffusion behavior of indium. was studied by thermal annealing, and a diffusion coefficient of ~10^-14cm²/sec at 400°C was obtained, which confirms the feasibility and validity of indium as an n-type dopant

Keywords

II-VI semiconductors; annealing; cadmium compounds; diffusion; elemental semiconductors; focal planes; indium; infrared detectors; mercury compounds; molecular beam epitaxial growth; semiconductor doping; HgCdTe; HgCdTe:In; In doping; MBE; diffusion; diffusion coefficient; donor activation energy; donor concentration; infrared FPA; n-type dopant; thermal annealing; Annealing; Doping; Electric variables measurement; Impurities; Indium; Mercury (metals); Molecular beam epitaxial growth; Physics; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981475

Filename

981475