DocumentCode :
2205727
Title :
The research of silicon wafer´s polishing fog
Author :
Di, Weiguo ; Liu, Yuling ; Tan, Baimei ; Li, Weiwei ; Yang, Ming
Author_Institution :
Hebei Univ. of Technol., Tianjin, China
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
294
Abstract :
In this paper, the mechanism of producing polishing fog is studied. The factors that influence polishing fog are analysis. Optimizing polishing technology on the basis of experiments can control the polishing fog
Keywords :
chemical mechanical polishing; elemental semiconductors; integrated circuit technology; semiconductor technology; silicon; CMP; Si; Si wafer; ageing; optimisation; polishing fog; surface quality; surfactant; Chemical technology; Chemistry; Manufacturing; Polymers; Rough surfaces; Silicon compounds; Slurries; Surface morphology; Surface roughness; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.981477
Filename :
981477
Link To Document :
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