DocumentCode
2205727
Title
The research of silicon wafer´s polishing fog
Author
Di, Weiguo ; Liu, Yuling ; Tan, Baimei ; Li, Weiwei ; Yang, Ming
Author_Institution
Hebei Univ. of Technol., Tianjin, China
Volume
1
fYear
2001
fDate
2001
Firstpage
294
Abstract
In this paper, the mechanism of producing polishing fog is studied. The factors that influence polishing fog are analysis. Optimizing polishing technology on the basis of experiments can control the polishing fog
Keywords
chemical mechanical polishing; elemental semiconductors; integrated circuit technology; semiconductor technology; silicon; CMP; Si; Si wafer; ageing; optimisation; polishing fog; surface quality; surfactant; Chemical technology; Chemistry; Manufacturing; Polymers; Rough surfaces; Silicon compounds; Slurries; Surface morphology; Surface roughness; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981477
Filename
981477
Link To Document