Novel ultra thin gate oxide growth technique by alternating current anodization

Author

Hwu, Jenn-Gwo ; Lee, Chuang-Yuan ; Ting, Chieh-Chih ; Chen, Wei-Len

Author_Institution

Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

2001

fDate

2001

Firstpage

309

Abstract

Ultra-thin gate oxides prepared by the novel anodic oxidation technique of using direct-current (DC), alternating-current (AC), and direct-current with ac oscillation (DAC) as anodization voltages are studied. After suitable high temperature anneal in N₂, these anodic oxides (ANO) show improved uniformity in electrical characteristics with respect to conventional rapid thermal oxides. Smaller leakage current and higher breakdown endurance are observed for these ANO oxides. Specially, DAC-ANO oxides present a further improved breakdown performance than the other oxides. Further, anodization is carried out with N-type Si (ANO-Si) replacing Pt as the cathode. ANO-Si oxides demonstrate even preferable reliability and superior electrical uniformity

Keywords

annealing; anodisation; dielectric thin films; electric breakdown; leakage currents; oxidation; silicon compounds; ANO oxides; N-type Si; N₂; Si-SiO₂; ac oscillation; alternating current anodization; alternating-current; anodic oxidation; anodic oxides; anodization voltages; breakdown endurance; direct-current; electrical characteristics; electrical uniformity; high temperature anneal; leakage current; ultra thin gate oxide growth technique; Aluminum; Cathodes; Electrodes; MOS capacitors; Oxidation; Platinum; Silicon; Substrates; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981483

Filename

981483