Title :
Self-heating Eeffects in SOI NLDEMOS Power Devices
Author :
Dieudonné, F. ; Haendler, S. ; Chouteau, S. ; Rosa, J. ; Waltz, P. ; Perrotin, A. ; Boissonnet, L. ; Rauber, B. ; Schaffnit, C. ; Raynaud, C.
Author_Institution :
STMicroelectron., Crolles R&D
Abstract :
Self-heating is evaluated in high-voltage devices from a 0.13 mum thin-film SOI CMOS technology. Our measurement procedure is described. The influence of different parameters such as layout variations is finally investigated, and main results are shown here. A strong linear correlation between the thermal resistance and the reverse of the active surface is demonstrated. Besides, a moderate impact of the metallization is observed
Keywords :
MIS devices; power semiconductor devices; semiconductor device models; silicon-on-insulator; 0.13 micron; CMOS technology; NLDEMOS power devices; SOI power devices; high voltage devices; self heating effects; thermal resistance; thin film; CMOS technology; Contact resistance; Electrical resistance measurement; Immune system; Implants; Performance evaluation; Surface resistance; Temperature; Testing; Thermal resistance;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650927
