Title :
Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment
Author :
Kang, Jinfeng ; Liu, Xiaoyan ; Han, Ruqi ; Yangyuan Wang ; Lian, G.J. ; Xun, Kun ; Yu, D.P. ; Xiong, G.C. ; Wu, S.C. ; Wang, Y.G.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The effects of nitrided interfacial layer between CeO2-Si on the interfacial properties are studied. The process of nitrogen ion beam bombardment (NIBB) was used to form the nitride dielectric-Si interface. The CeO2 high-k dielectric films were grown on Si(100) substrates by pulsed laser deposition (PLD) and the capacitors with Pt/CeO2/Si structure were fabricated. The atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V), and current-voltage (I-V) methods were used to study the interfacial characteristics of the samples. The results showed that a SiNxOy layer was formed on Si surface by the NIBB process. The nitride layer between CeO2 and Si can suppress the further formation of interfacial layer between CeO2 and Si, which is helpful to improve the structural and electrical characteristics of CeO2-Si interface
Keywords :
MOS capacitors; X-ray photoelectron spectra; atomic force microscopy; cerium compounds; dielectric thin films; diffusion barriers; elemental semiconductors; interface structure; ion implantation; nitridation; pulsed laser deposition; semiconductor-insulator boundaries; silicon; transmission electron microscopy; AFM; CeO2-Si; CeO2/Si; HRTEM; Pt-CeO2-Si; Pt/CeO2/Si; Si; Si(100) substrates; SiNxOy; SiNxOy layer; XPS; atomic force microscopy; capacitance-voltage methods; capacitors; current-voltage methods; electrical properties; high-k dielectric films; high-resolution transmission electron microscopy; interfacial characteristics; interfacial layer; interfacial properties; nitride dielectric-Si interface; nitrided interfacial layer; nitrogen ion beam bombardment; pulsed laser deposition; structural properties; x-ray photoelectron spectroscopy; Atomic force microscopy; Capacitance-voltage characteristics; Dielectric substrates; High-K gate dielectrics; Ion beams; Nitrogen; Photoelectron microscopy; Pulsed laser deposition; Semiconductor films; Transmission electron microscopy;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981485
