Title :
Deposition of high k ZrO2 thin films by high vacuum electron beam evaporation at room temperature
Author :
Zhang, Ninglin ; Wan, Qing ; Song, Zhitang ; Shen, Qinwo ; Lin, Chenglu
Author_Institution :
State Key Lab. of Functional Mater. for Informatics, Shanghai Inst. of Metall., China
Abstract :
Amorphous zirconium oxide (ZrO2) films have been deposited on P type Si (100) substrates using High Vacuum Electron Beam Evaporation (HVEBE) at room temperature. The chemical composition of the films was investigated by X-ray photoelectron spectroscopy (XPS). The experimental results reveal that the dominating chemical state of zirconia thin films is fully oxidized state, Zr4+, no matter whether annealed in oxygen. The structure information from X-ray Diffraction (XRD) shows that zirconia thin film deposited at room temperature by HVEBE was completely amorphous. Spreading Resistance Profile (SRP) indicates that ZrO2 thin films annealed or not have excellent insulating property (with resistance of more than 108 Ω) and the thickness is 800 A. After thermal treatment at 600°C in O2 ambient, the RMS roughness changed a little to 13.8 A across an area of 1 × 1 μm2 , and that of the as-deposited film is 8.09 A
Keywords :
X-ray photoelectron spectra; annealing; dielectric thin films; electrical resistivity; electron beam deposition; heat treatment; noncrystalline structure; stoichiometry; surface topography; valency; zirconium compounds; 108 ohm; 20 C; 600 C; 800 A; P type Si (100) substrates; RMS roughness; Si; X ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; Zr4+; ZrO2; amorphous zirconium oxide films; chemical composition; chemical state; deposition; fully oxidized state; high k ZrO2 thin films; high vacuum electron beam evaporation; insulating property; resistance; room temperature; spreading resistance profile; structure information; thermal treatment; thickness; zirconia thin films; Amorphous materials; Annealing; Chemicals; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Temperature; Thermal resistance; Transistors; Zirconium;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981486
