Title :
Numerical Analysis of a Trench Gate FLIMOSFET with No Quasi-Saturation, Improved Specific OnResistance and Better Synchronous Rectifying Characteristics
Author :
Vaid, R. ; Padha, N.
Author_Institution :
Dept. of Phys. & Electron., Jammu Univ., Jammu & Kashmir
Abstract :
In this paper, we report a novel trench gate FLIMOSFET structure designed using the concept of opposite doped buried regions (ODBR) and floating island (FLIMOSFET) along with trench-gate technology. The proposed device structure exhibits quasi-saturation free output and transconductance characteristics over a wide range of voltages as well as gives reduced on-resistance when compared with the conventional FLIMOSFET for two trench depths 2.5 and 3 microns. The new device structure does not give any degradation towards the breakdown voltage which remains almost constant at 65 volts. It also exhibit better synchronous rectifying characteristics
Keywords :
MOSFET; numerical analysis; semiconductor device breakdown; 2.5 microns; 3 microns; 65 V; breakdown voltage; floating island; opposite doped buried regions; quasisaturation free output; specific on-resistance characteristics; synchronous rectifying characteristics; transconductance characteristics; trench gate FLIMOSFET; Degradation; Doping; Electric breakdown; MOSFET circuits; Numerical analysis; Power MOSFET; Schottky barriers; Silicon; Transconductance; Voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650932
