Numerical Analysis of a Trench Gate FLIMOSFET with No Quasi-Saturation, Improved Specific OnResistance and Better Synchronous Rectifying Characteristics

Author

Vaid, R. ; Padha, N.

Author_Institution

Dept. of Phys. & Electron., Jammu Univ., Jammu & Kashmir

fYear

0

fDate

0-0 0

Firstpage

207

Lastpage

210

Abstract

In this paper, we report a novel trench gate FLIMOSFET structure designed using the concept of opposite doped buried regions (ODBR) and floating island (FLIMOSFET) along with trench-gate technology. The proposed device structure exhibits quasi-saturation free output and transconductance characteristics over a wide range of voltages as well as gives reduced on-resistance when compared with the conventional FLIMOSFET for two trench depths 2.5 and 3 microns. The new device structure does not give any degradation towards the breakdown voltage which remains almost constant at 65 volts. It also exhibit better synchronous rectifying characteristics

Keywords

MOSFET; numerical analysis; semiconductor device breakdown; 2.5 microns; 3 microns; 65 V; breakdown voltage; floating island; opposite doped buried regions; quasisaturation free output; specific on-resistance characteristics; synchronous rectifying characteristics; transconductance characteristics; trench gate FLIMOSFET; Degradation; Doping; Electric breakdown; MOSFET circuits; Numerical analysis; Power MOSFET; Schottky barriers; Silicon; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650932

Filename

1650932