Title :
Non-destructive characterisation of porosity and pore size distribution in porous low-k dielectric films
Author :
Baklanov, M.R. ; Mogilnikov, K.P.
Author_Institution :
XPEQT at IMEC, Leuven, Belgium
Abstract :
Ellipsometric porosimetry (EP) is an effective method for characterization of porosity, pore size distribution (PSD) and specific surface area in porous films deposited on top of any smooth substrate. EP is a new modification of the adsorption porosimetry. In situ ellipsometry is used to determine the amount of adsorptive which adsorbed/condensed in the film. Change in refractive index is used to calculate of the quantity of adsorptive present in the film. Results of the analysis are in good agreement with data obtained by other instrumentation like low-temperature nitrogen porosimetry (BJH), positronium annihilation lifetime spectroscopy (PALS) and small angle neutron scattering (SANS)
Keywords :
area measurement; dielectric materials; dielectric thin films; ellipsometry; nondestructive testing; permittivity; porosity; porous materials; positron annihilation; refractive index; spatial variables measurement; BJH; PALS; SANS; adsorption porosimetry; ellipsometric porosimetry; film adsorptive quantity; in situ ellipsometry; low-temperature nitrogen porosimetry; nondestructive characterisation; pore size distribution; porosity; porous low-k dielectric films; positronium annihilation lifetime spectroscopy; refractive index; small angle neutron scattering; specific surface area; Dielectric films; Dielectric measurements; Dielectric substrates; Ellipsometry; Equations; Mesoporous materials; Nitrogen; Optical films; Polarization; Refractive index;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981492
