Exploring Silicon Carbide For Thermal Infrared Radiators

A thermal infrared radiator (blackbody) capable of fast thermal cycling is realized for pulsed operation at high frequency using elements from heavily-doped LPCVD poly-SiC. High emissivity, high thermal conductivity, low thermal mass and excellent mechanical robustness of poly-SiC enable this development. Poly-SiC´s peak emission wavelength falls in the range of short wavelength infrared; devices are pulsed at frequencies up to 100 Hz with modulation depth near 50%. Materials analysis examining the surfaces of pre-and post-heated emitter elements has been performed using Auger electron spectroscopy (AES). Device reliability study has been carried out, including the dependence on thermal cycling/operation of poly-SiC´s emissive, thermal, electrical and mechanical properties relevant to the presented devices.