• DocumentCode
    2206100
  • Title

    Development of copper CMP slurry

  • Author

    Xin, Wang ; Hongying, Wang ; Yuling, Liu

  • Author_Institution
    Hebei Univ. of Technol., Tianjin, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    369
  • Abstract
    This paper presents a formulation of slurry for Cu CMP, in which colloidal silica (SiO2) was used as the abrasive particles. Since Cu is chemically active we tried to planarize Cu by "soft friction" using colloidal silica (size of 20nm), with the selected oxidizer in which metal ions aren\´t involved, and organic amine is used as the complex agent. Silicon sol (size of 20nm) is softer than Al2 O3, has no contamination, and better dispersity and suspension with little scratching. Moreover, adding non-metal ions to the chelate can compress contamination of metal ions and adsorption of particles, so that the surface is smooth and bright
  • Keywords
    chemical mechanical polishing; copper; integrated circuit metallisation; silicon compounds; Cu; Cu CMP slurry formulation; SiO2; abrasive particles; colloidal silica; organic amine; planarize Cu; soft friction; Abrasives; Chemical technology; Copper; Inorganic materials; Integrated circuit interconnections; Organic chemicals; Planarization; Silicon compounds; Slurries; Surface contamination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981496
  • Filename
    981496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2206100