Temperature estimation of ULSI metallization systems

Author

Xiao, X. ; Ruan, G. ; Zhu, Z.M. ; Gessner, T.

Author_Institution

Center of Microtechnologies, Chemnitz Univ. of Technol., Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

375

Abstract

The problem of heat dissipation of interconnection systems of ULSI circuits becomes more critical with the application of low dielectric constant materials, the increase of interconnect levels and the current density. In this study, thermal behavior of many interconnection cases are investigated by applying a set of compact quasi-analytic equations for estimating the temperature distribution on the interconnection system as well as by numerical simulation

Keywords

ULSI; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; temperature distribution; ULSI metallization systems; current density; heat dissipation; interconnect levels; interconnection systems; low dielectric constant material; temperature distribution; temperature estimation; Dielectric constant; Dielectric materials; Dielectric substrates; Equations; Integrated circuit interconnections; Metallization; Power system interconnection; Temperature distribution; Thermal conductivity; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981498

Filename

981498