DocumentCode :
2206331
Title :
Annealing impact on damascene Cu resistivity and microstructures
Author :
Jiang, Qing-Tang ; Tsai, Ming-Hsing ; Frank, Aaron ; Parihar, Vijay ; Nowell, Matt ; Augur, R.A. ; Havemann, R.H. ; Luttmer, J.D.
Author_Institution :
Int. Sernatech, Austin, TX, USA
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
400
Abstract :
The effect of different post electroplating anneals on dual damascene Cu microstructures and via chain yields using both rapid thermal processing and furnace anneal were investigated. It was found the grain size, (111) texture and Cu line resistance varied strongly with the annealing conditions. The minimum feature of trench width or height imposes physical limit to the average grain size. The Cu line resistivity increases rapidly as the feature size becomes smaller than 0.2 μm. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu
Keywords :
annealing; copper; electrical resistivity; electrodeposits; electron mean free path; grain boundaries; grain size; integrated circuit interconnections; integrated circuit metallisation; rapid thermal processing; texture; (111) texture; Cu; Cu line resistance; Cu line resistivity; chain yields; damascene Cu resistivity; electron mean free path; feature size; furnace anneal; grain boundaries; grain size; microstructures; post electroplating anneals; rapid thermal processing; sidewalls; trench height; trench width; Conductivity; Electrons; Furnaces; Geometry; Grain boundaries; Grain size; Microstructure; Rapid thermal annealing; Rapid thermal processing; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.981504
Filename :
981504
Link To Document :
بازگشت