DocumentCode
2206331
Title
Annealing impact on damascene Cu resistivity and microstructures
Author
Jiang, Qing-Tang ; Tsai, Ming-Hsing ; Frank, Aaron ; Parihar, Vijay ; Nowell, Matt ; Augur, R.A. ; Havemann, R.H. ; Luttmer, J.D.
Author_Institution
Int. Sernatech, Austin, TX, USA
Volume
1
fYear
2001
fDate
2001
Firstpage
400
Abstract
The effect of different post electroplating anneals on dual damascene Cu microstructures and via chain yields using both rapid thermal processing and furnace anneal were investigated. It was found the grain size, (111) texture and Cu line resistance varied strongly with the annealing conditions. The minimum feature of trench width or height imposes physical limit to the average grain size. The Cu line resistivity increases rapidly as the feature size becomes smaller than 0.2 μm. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu
Keywords
annealing; copper; electrical resistivity; electrodeposits; electron mean free path; grain boundaries; grain size; integrated circuit interconnections; integrated circuit metallisation; rapid thermal processing; texture; (111) texture; Cu; Cu line resistance; Cu line resistivity; chain yields; damascene Cu resistivity; electron mean free path; feature size; furnace anneal; grain boundaries; grain size; microstructures; post electroplating anneals; rapid thermal processing; sidewalls; trench height; trench width; Conductivity; Electrons; Furnaces; Geometry; Grain boundaries; Grain size; Microstructure; Rapid thermal annealing; Rapid thermal processing; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981504
Filename
981504
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