DocumentCode
2206497
Title
Ultra shallow junction technology for sub-100 nm CMOS
Author
Bunji, Mizuno
Author_Institution
Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Japan
Volume
1
fYear
2001
fDate
2001
Firstpage
433
Abstract
We present the technology "Quantum Leap" encompassing low energy doping processes and novel annealing technologies to be the standard technology which can achieve the ultra shallow junction with very high throughput and lower resistance. The technologies are applied to fabricate sub-100 nm CMOS
Keywords
CMOS integrated circuits; VLSI; doping profiles; integrated circuit technology; ion implantation; laser beam annealing; rapid thermal annealing; semiconductor doping; 100 nm; Quantum Leap technology; RTA; annealing technologies; high activation technologies; high throughput; laser annealing; low energy doping processes; resistance reduction; sub-100 nm CMOS; ultra shallow junction technology; Annealing; CMOS process; CMOS technology; Chemical technology; Costs; Doping; Ion implantation; Plasma immersion ion implantation; Plasma temperature; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.981511
Filename
981511
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