The sub-micron fabrication technology

Author

Ming, Liu ; Bao-qin, Chen ; Tian-chun, Ye ; He, Qian ; Qiuxia, Xu

Author_Institution

Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China

Volume

1

fYear

2001

fDate

2001

Firstpage

452

Abstract

Electron beam lithography, X-ray lithography and etching technology are introduced in this paper. The submicron and nanometer fabrications are playing an ever-increasing role in science and technology. For e-beam lithography, the resist process, proximity effect correction and mix & match technologies are investigated. 0.15 μm GaAs PHEMT devices are successfully fabricated by employing X-ray lithography. Finally, 100 nm pattern is etched by ICP

Keywords

X-ray lithography; electron beam lithography; electron resists; gallium arsenide; integrated circuit technology; proximity effect (lithography); sputter etching; 0.15 micron; 100 nm; GaAs; GaAs PHEMT devices; ICP; RIE; X-ray lithography; dry etching; electron beam lithography; etching technology; ion beam etching; mix-match technologies; proximity effect correction; reactive ion beam etching; resist process; submicron fabrication technology; Chemical technology; Circuits; Electron beams; Etching; Fabrication; Microelectronics; Ovens; Proximity effect; Resists; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981515

Filename

981515