• DocumentCode
    2206627
  • Title

    ICP dry etching for deep sub-micrometer vertical trench in Si and SiO2

  • Author

    Wei Ke ; Xun-Chun, Liu ; Xiao-Xu, Guo ; Wang Run-Mei ; Zhen-Ya, Cao

  • Author_Institution
    Microelectron. R&D Center, Acad. Sinica, Beijing, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    456
  • Abstract
    Dry etching is a very important process in integrated circuit manufacture. Perfect results of etching a 154 nm trench in silicon and a 138 nm trench in silicon dioxide by a pagoda-shape ICP reactor are reported. A detail study of etching characteristics as function of gas composition, flow rate, RF power, pressure and self-bias voltage, is described
  • Keywords
    VLSI; integrated circuit technology; silicon; silicon compounds; sputter etching; 138 nm; 154 nm; DSM vertical trench; IC manufacture; ICP dry etching; RF power; Si; Si trench; SiO2; SiO2 trench; deep submicron vertical trench; etching characteristics; flow rate; gas composition; inductively coupled plasma etching; pagoda-shape ICP reactor; pressure; self-bias voltage; Argon; Coils; Dry etching; Fabrication; Plasma applications; Plasma density; Power supplies; Resists; Silicon compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981516
  • Filename
    981516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2206627