P-Type Conduction in Sputtered ZnO Thin Films Doped by Nitrogen

Author

Shtereva, K. ; Tvarozek, V. ; Novotny, I. ; Kovac, J. ; Sutta, P. ; Vincze, A.

Author_Institution

Dept. of Electron., Rousse Univ.

fYear

0

fDate

0-0 0

Firstpage

330

Lastpage

333

Abstract

Nitrogen doped zinc oxide (ZnO:N) thin films were prepared by RF diode sputtering from ZnO target in different ratio of Ar/N₂ gas mixture. The p-type features of ZnO:N thin films have been caused by the incorporation of the nitrogen acceptor NO into ZnO what was proven by second ion mass spectroscopy (SIMS) analysis. The minimum value of resistivity of 790 Omegacm, a Hall mobility of 22 cm²V^-1s^-1 and the carrier concentration of 3.6 times 10¹⁴ cm^-3 were yielded at 75 % N ₂. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002) plane at 25 % N₂ and of (100) plane for higher N₂ concentrations. The average grain size was from 7 to 42 nm for all Ar/N₂ ratios. ZnO:N films exhibit relatively high micro strains (10 times 10^-3)

Keywords

Hall mobility; II-VI semiconductors; X-ray diffraction; argon; carrier density; gas mixtures; nitrogen; secondary ion mass spectroscopy; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; 7 to 42 nm; Hall mobility; P-type conduction; RF diode sputtering; SIMS analysis; X-ray diffraction measurements; ZnO thin films; ZnO:N; carrier concentration; gas mixture; grain size; nitrogen acceptor; second ion mass spectroscopy; zinc oxide thin films; Argon; Conductivity; Diodes; Hall effect; Mass spectroscopy; Nitrogen; Radio frequency; Sputtering; X-ray diffraction; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650966

Filename

1650966