Title :
Reliability Issues Related to Laser-Annealed Implanted Back-Wafer Contacts in Bipolar Silicon-on-Glass Processes
Author :
Lorito, G. ; Gonda, V. ; Liu, S. ; Scholtes, T.L.M. ; Schellevis, H. ; Nanver, L.K.
Author_Institution :
Dept. of Microelectron., Delft Univ. of Technol.
Abstract :
Silicon-on-glass vertical NPN´s and PNP´s with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low-temperature back-wafer processing
Keywords :
bipolar transistors; impact ionisation; laser beam annealing; leakage currents; semiconductor device reliability; back-wafer contacts; base-leakage currents; bipolar silicon-on-glass processes; collector contacts; impact-ionization currents; laser annealing; low-temperature back-wafer processing; silicon-on-glass vertical NPN; silicon-on-glass vertical PNP; Annealing; Contacts; Fabrication; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Surface emitting lasers; Varactors; Wet etching;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1650969
