Title :
Studying on electron beam lithography technology
Author :
Yugui, Lin ; Weijun, Wang ; Siwei, Luo ; Zeliu, Jiang ; Jiliang, Pu
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
We have worked out a method to obtain T-gate structures of sub-micron size with the Leica VB-5HR e-beam lithography system, tri-layer resists, and several levels of dose assignments, and applied this method to make GaAs microwave and millimeter wave devices and integrated circuits. Also, we have studied on lithography to fabricate fine lines of sub-micron even to nano-level, and we obtained the golden lifted-off features of 17 nm
Keywords :
III-V semiconductors; MMIC; electron beam lithography; electron resists; gallium arsenide; microwave integrated circuits; millimetre wave integrated circuits; nanotechnology; 17 nm; GaAs; GaAs microwave devices; Leica VB-5HR e-beam lithography system; MMIC; T-gate structures; dose assignments; electron beam lithography technology; fine lines; integrated circuits; millimeter wave devices; nano-level structure; sub-micron structure; tri-layer resists; Electron beams; Gallium arsenide; Integrated circuit technology; Lithography; Microwave devices; Microwave theory and techniques; Millimeter wave devices; Millimeter wave integrated circuits; Millimeter wave technology; Resists;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981520
