Preparation of high purity water with low concentration of dissolved oxygen (DO) and total organic carbon (TOC) for VLSI process

To meet the needs of the rapid development of VLSI for high purity water, high quality equipment for high purity water with the capacity of 10t/h has been designed and built. The equipment contains triply connected membrane contactors working at 22°C under a pressure of 0.01 Mpa with N₂ flow rate of 2.3 m³/h, a double RO and an 185 nm UV lamp. After the treatment by using the equipment the DO concentration can be decreased from 3000 μg/L down to 0.6 μg/L and the TOC concentration from 9000 μg/L down to 0.7 μg/L which satisfies the requirement of VLSI fabrication