Electrical Properties of HfO2 Films Formed by Ion Assisted Deposition

Author

Cherkaoui, K. ; Negara, A. ; McDonnell, S. ; Hughes, G. ; Modreanu, M. ; Hurley, P.K.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork

fYear

0

fDate

0-0 0

Firstpage

351

Lastpage

354

Abstract

In this paper, the electrical and structural analysis of HfO₂ thin films formed by ion assisted deposition are reported. The electrical results show excellent layer uniformity and very good reproducibility before post deposition annealing. The influence of the oxygen flow during the growth upon the electrical properties of the film has also been investigated. Forming gas annealing removed the hysteresis observed in the capacitance measurements. However, the electrical results and TEM measurements show the presence of an important SiO₂ interfacial layer

Keywords

annealing; dielectric thin films; electric properties; hafnium compounds; ion beam assisted deposition; silicon compounds; HfO₂; SiO₂; TEM measurements; electrical analysis; electrical properties; gas annealing; interfacial layer; ion assisted deposition; oxygen flow; post deposition annealing; structural analysis; thin films; Annealing; Argon; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hysteresis; MOS capacitors; Optical films; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650972

Filename

1650972