A New Circuit Model for Designing Fully Integrated Class-A Power Amplifier

Author

Guan, Xiaokang ; Feng, Haigang ; Wang, Albert ; Yang, Liwu

Author_Institution

Dept. of ECE, Illinois Inst. of Technol., Chicago, IL

fYear

0

fDate

0-0 0

Firstpage

380

Lastpage

383

Abstract

This paper presents a new circuit model for Class-A power amplifier (PA), which can be used to guide design of fully-integrated PA by accurately estimating the optimum load resistance (Ropt), hence to achieve optimized PA performance, e.g., gain, output power (Po), power-added efficiency (PAE) and harmonics, etc. A new figure-of-merit (F) is introduced as a design criterion in practical PA design to ensure optimum overall circuit performance. This new model is verified using a two-stage fully-integrated 2.4GHz class-A PA designed and implemented in a commercial 0.35mum SiGe BiCMOS technology

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; integrated circuit design; integrated circuit modelling; 0.35 micron; 2.4 GHz; BiCMOS technology; SiGe; class-A power amplifier; figure-of-merit; optimum load resistance; power-added efficiency; BiCMOS integrated circuits; Circuit optimization; Design optimization; Germanium silicon alloys; Heterojunction bipolar transistors; Optimized production technology; Power amplifiers; Power generation; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2006 25th International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0117-8

Type

conf

DOI

10.1109/ICMEL.2006.1650979

Filename

1650979