Title :
Relation between product yield and plasma process induced damage
Author :
Luchies, Jan-Marc ; Simon, Paul ; Kuper, Fred ; Maly, Wojciech
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
The impact of plasma process induced damage (charging) on the yield of products in 75-120 Å CMOS processes has been analyzed. It was shown that product yield loss is related to the threshold voltage shift of charging sensitive test structures and thus to charging. A simple model is introduced in which the charging related yield loss component of products is expressed by the attributes of antennas and the extent of charging. The proposed model is found to predict charging related yield loss using only one process dependent parameter, as is shown for various products
Keywords :
CMOS integrated circuits; dielectric thin films; integrated circuit testing; integrated circuit yield; plasma materials processing; semiconductor process modelling; surface treatment; 75 to 120 angstrom; CMOS processes; antennas; charging related yield loss; charging related yield loss model; plasma process induced charging damage; plasma process induced damage; process dependent parameter; product yield; product yield loss; sensitive test structure charging; threshold voltage shift; Antenna accessories; Antenna measurements; CMOS process; CMOS technology; Gate leakage; Plasma measurements; Predictive models; Semiconductor device modeling; Testing; Threshold voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725561
