Title :
Silicide synthesis by metal ion implantation and ion deposition
Author :
Zhang Tonghe ; Yuguang, Wu ; Zhongzhen, Yi ; Shengji, Zhang ; Xianying, Wu ; Xu, Zhang ; Huixing, Zhang ; Xiaoji, Zhang ; Weidong, Qian
Author_Institution :
Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
Abstract :
Silicides of cobalt with good properties were prepared using metal vapor vacuum arc (MEVVA) ion implantation. The epitaxial growth of Co silicide was observed by TEM. A continuous silicide layer with thickness of 80-200 nm was obtained. The sheet resistance of Co silicide decreases with increase of ion flux and ion dose. After annealing the sheet resistance decreases further. The phase transition from Co2Si to CoSi2 was observed when the ion flux and annealing temperature increased. Co (or Mo) silicide is synthesized using Co (or Mo) and Si ion alternant deposition. The coating quality is better than that of Co ion implantation. The power microwave transistors were fabricated using ion implantation, it shows that emitter resistance and noise of the transistor decrease markedly, the microwave property was improved obviously
Keywords :
annealing; cobalt compounds; electrical resistivity; ion implantation; microwave power transistors; semiconductor device measurement; semiconductor device noise; solid phase epitaxial growth; solid-state phase transformations; transmission electron microscopy; 80 to 200 nm; Co silicide; Co2Si; CoSi2; Mo silicide; MoSi2; TEM; annealing; coating quality; cobalt; emitter resistance; epitaxial growth; ion deposition; ion dose; ion flux; metal ion implantation; metal vapor vacuum arc ion implantation; microwave property; noise; phase transition; power microwave transistors; sheet resistance; silicide synthesis; thickness; Coatings; Cobalt; Ion beams; Ion implantation; Laboratories; Magnetic separation; Microwave transistors; Rapid thermal annealing; Silicides; Silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981525
