• DocumentCode
    2207022
  • Title

    Nucleation of CoSi2 and MnSi1.7 in the Co/Mn/Si ternary system

  • Author

    Detavernier, C. ; Van Meirhaeghe, R.L. ; Qu, Xin-Ping ; Ru, Guo-Ping ; Zhu, Shi-Yang ; Li, Bing-Zong

  • Author_Institution
    Dept. of Solid State Sci., Univ. Gent, Belgium
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    509
  • Abstract
    Silicide formation is studied for the ternary Co-Mn-Si system. At low temperatures, a mixed Co1-xMnxSi silicide is formed. It is found that the nucleation temperature of the Si-rich phases is increased by alloying: the nucleation temperature of CoSi2 is increased by the presence of a small amount of Mn, while the nucleation temperature of MnSi1.7 is increased in the presence of a small amount of Co. The nuclei could be observed using optical microscopy and atomic force microscopy. The influence of alloying on the nucleation of CoSi2 and MnSi1.7 is explained based on the effect of entropy of mixing
  • Keywords
    atomic force microscopy; chemical interdiffusion; cobalt; cobalt compounds; elemental semiconductors; entropy; heat of mixing; manganese; manganese compounds; nucleation; optical microscopy; semiconductor-metal boundaries; silicon; Co-Mn-Si; Co/Mn/Si ternary system; Co1-xMnxSi; CoSi2; MnSi1.7; Si-rich phases; alloying; atomic force microscopy; entropy; mixed Co1-xMnxSi silicide; mixing; nucleation temperature; optical microscopy; silicide formation; Alloying; Atom optics; Atomic force microscopy; Control systems; Entropy; Optical microscopy; Rapid thermal annealing; Silicides; Temperature; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981529
  • Filename
    981529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2207022