Title :
Ni(Pt)Si thin film formation and its electrical characteristics with Si substrate
Author :
Han, Yong-Zhao ; Qu, Xing-Ping ; Jiang, Yu-Long ; Xu, Bei-Lei ; Cao, Yong-Feng ; Ru, Guo-Ping ; Li, Bin-Zong ; Chu, P.K.
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The solid phase silicidations for the bilayers of Ni/Pt and Pt/Ni sputtered on Si(100) substrates were studied. The effect of Pt addition in the NiSi film on its thermal stability enhancement was investigated. The results show that the phase transformation from Ni(Pt)Si to NiSi2 was delayed to higher temperature than the Ni/Si system without Pt as a capping- or inter-layer by more than 100°C. The apparent Schottky barrier height of Ni(Pt)Si/n-Si(111) is modulated with the Pt content, and the electrical characteristic is good in the silicidation temperature of 500-800°C
Keywords :
Schottky barriers; integrated circuit interconnections; metallic thin films; nickel compounds; platinum compounds; semiconductor-metal boundaries; solid-state phase transformations; sputtered coatings; thermal stability; 500 to 800 C; Ni-Pt; NiPtSi; Pt addition; Schottky barrier height; Si; Si(100) substrates; bilayers; interconnect; phase transformation; solid phase silicidations; sputtered film; thermal stability; Delay; Electric variables; Schottky barriers; Silicidation; Solids; Sputtering; Substrates; Temperature; Thermal stability; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981530
