Title :
CVD SiGe(C) epitaxial growth and its application to MOS devices
Author :
Murota, Junichi ; Sakuraba, Masao ; Matsuura, Takashi
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
By ultraclean low-pressure CVD using SiH4 and GeH4 gases, epitaxial growth of Si/Si1-xGex/Si heterostructures with atomically flat surfaces and interfaces on Si(100) is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH3, B2H6, or SiH3CH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor doping; semiconductor materials; silicon; vapour phase epitaxial growth; Si-Si1-xGex-Si; atomically flat surfaces; deposition rate; epitaxial growth; in-situ doping characteristics; modified Langmuir-type adsorption; reactant gas adsorption/reaction; selective epitaxy; source/drain regions.MOS devices; ultraclean low-pressure CVD; ultrasmall MOSFETs; Atomic layer deposition; Epitaxial growth; Fabrication; Gases; Impurities; MOS devices; MOSFETs; Substrates; Surface cleaning; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981533
